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IRF6708S2TRPBF Datasheet

IRF6708S2TRPBF Datasheet
Total Pages: 10
Size: 303.4 KB
Infineon Technologies
This datasheet covers 2 part numbers: IRF6708S2TRPBF, IRF6708S2TR1PBF
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IRF6708S2TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.9mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 20W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET S1

Package / Case

DirectFET™ Isometric S1

IRF6708S2TR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.9mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 20W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET S1

Package / Case

DirectFET™ Isometric S1