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IRF7220GTRPBF Datasheet

IRF7220GTRPBF Datasheet
Total Pages: 7
Size: 183.62 KB
Infineon Technologies
This datasheet covers 1 part numbers: IRF7220GTRPBF
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IRF7220GTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

14V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

12mOhm @ 11A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

8075pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)