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IRF7822PBF Datasheet

IRF7822PBF Datasheet
Total Pages: 6
Size: 143.28 KB
Infineon Technologies
This datasheet covers 2 part numbers: IRF7822PBF, IRF7822TRPBF
IRF7822PBF Datasheet Page 1
IRF7822PBF Datasheet Page 2
IRF7822PBF Datasheet Page 3
IRF7822PBF Datasheet Page 4
IRF7822PBF Datasheet Page 5
IRF7822PBF Datasheet Page 6
IRF7822PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

5500pF @ 16V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF7822TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

5500pF @ 16V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)