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IRFBF20 Datasheet

IRFBF20 Datasheet
Total Pages: 9
Size: 1,130.35 KB
Vishay Siliconix
This datasheet covers 2 part numbers: IRFBF20, IRFBF20PBF
IRFBF20 Datasheet Page 1
IRFBF20 Datasheet Page 2
IRFBF20 Datasheet Page 3
IRFBF20 Datasheet Page 4
IRFBF20 Datasheet Page 5
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IRFBF20 Datasheet Page 8
IRFBF20 Datasheet Page 9
IRFBF20

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 25V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFBF20PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 25V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3