Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFD9120 Datasheet

IRFD9120 Datasheet
Total Pages: 9
Size: 2,032.49 KB
Vishay Siliconix
This datasheet covers 2 part numbers: IRFD9120, IRFD9120PBF
IRFD9120 Datasheet Page 1
IRFD9120 Datasheet Page 2
IRFD9120 Datasheet Page 3
IRFD9120 Datasheet Page 4
IRFD9120 Datasheet Page 5
IRFD9120 Datasheet Page 6
IRFD9120 Datasheet Page 7
IRFD9120 Datasheet Page 8
IRFD9120 Datasheet Page 9
IRFD9120

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

IRFD9120PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)