IRLML6302TR Datasheet
IRLML6302TR Datasheet
Total Pages: 8
Size: 215.81 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IRLML6302TR
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Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 780mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 600mOhm @ 610mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.45V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 97pF @ 15V FET Feature - Power Dissipation (Max) 540mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro3™/SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
