IRLW630ATM Datasheet
IRLW630ATM Datasheet
Total Pages: 7
Size: 226.14 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
IRLW630ATM
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
