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IXBH42N170 Datasheet

IXBH42N170 Datasheet
Total Pages: 5
Size: 175.74 KB
IXYS
This datasheet covers 2 part numbers: IXBH42N170, IXBT42N170
IXBH42N170 Datasheet Page 1
IXBH42N170 Datasheet Page 2
IXBH42N170 Datasheet Page 3
IXBH42N170 Datasheet Page 4
IXBH42N170 Datasheet Page 5
IXBH42N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 42A

Power - Max

360W

Switching Energy

-

Input Type

Standard

Gate Charge

188nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.32µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)

IXBT42N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 42A

Power - Max

360W

Switching Energy

-

Input Type

Standard

Gate Charge

188nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.32µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268