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IXBX75N170 Datasheet

IXBX75N170 Datasheet
Total Pages: 5
Size: 179.72 KB
IXYS
This datasheet covers 2 part numbers: IXBX75N170, IXBK75N170
IXBX75N170 Datasheet Page 1
IXBX75N170 Datasheet Page 2
IXBX75N170 Datasheet Page 3
IXBX75N170 Datasheet Page 4
IXBX75N170 Datasheet Page 5
IXBX75N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

200A

Current - Collector Pulsed (Icm)

580A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 75A

Power - Max

1040W

Switching Energy

-

Input Type

Standard

Gate Charge

350nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

IXBK75N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

200A

Current - Collector Pulsed (Icm)

580A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 75A

Power - Max

1040W

Switching Energy

-

Input Type

Standard

Gate Charge

350nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264