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IXFB110N60P3 Datasheet

IXFB110N60P3 Datasheet
Total Pages: 5
Size: 136.53 KB
IXYS
This datasheet covers 1 part numbers: IXFB110N60P3
IXFB110N60P3 Datasheet Page 1
IXFB110N60P3 Datasheet Page 2
IXFB110N60P3 Datasheet Page 3
IXFB110N60P3 Datasheet Page 4
IXFB110N60P3 Datasheet Page 5

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

56mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

245nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

18000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA