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IXFB52N90P Datasheet

IXFB52N90P Datasheet
Total Pages: 4
Size: 121.1 KB
IXYS
This datasheet covers 1 part numbers: IXFB52N90P
IXFB52N90P Datasheet Page 1
IXFB52N90P Datasheet Page 2
IXFB52N90P Datasheet Page 3
IXFB52N90P Datasheet Page 4
IXFB52N90P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

308nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

19000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA