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IXFC12N80P Datasheet

IXFC12N80P Datasheet
Total Pages: 2
Size: 202.01 KB
IXYS
This datasheet covers 1 part numbers: IXFC12N80P
IXFC12N80P Datasheet Page 1
IXFC12N80P Datasheet Page 2
IXFC12N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

930mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™