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IXFH320N10T2 Datasheet

IXFH320N10T2 Datasheet
Total Pages: 6
Size: 186.77 KB
IXYS
This datasheet covers 1 part numbers: IXFH320N10T2
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IXFH320N10T2 Datasheet Page 3
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IXFH320N10T2 Datasheet Page 5
IXFH320N10T2 Datasheet Page 6

Manufacturer

IXYS

Series

HiPerFET™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

320A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

430nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

26000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3