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IXFN32N100Q3 Datasheet

IXFN32N100Q3 Datasheet
Total Pages: 5
Size: 124.76 KB
IXYS
This datasheet covers 1 part numbers: IXFN32N100Q3
IXFN32N100Q3 Datasheet Page 1
IXFN32N100Q3 Datasheet Page 2
IXFN32N100Q3 Datasheet Page 3
IXFN32N100Q3 Datasheet Page 4
IXFN32N100Q3 Datasheet Page 5

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9940pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC