Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFN360N15T2 Datasheet

IXFN360N15T2 Datasheet
Total Pages: 6
Size: 178.36 KB
IXYS
This datasheet covers 1 part numbers: IXFN360N15T2
IXFN360N15T2 Datasheet Page 1
IXFN360N15T2 Datasheet Page 2
IXFN360N15T2 Datasheet Page 3
IXFN360N15T2 Datasheet Page 4
IXFN360N15T2 Datasheet Page 5
IXFN360N15T2 Datasheet Page 6

Manufacturer

IXYS

Series

GigaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

310A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

715nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

47500pF @ 25V

FET Feature

-

Power Dissipation (Max)

1070W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC