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IXFN50N120SIC Datasheet

IXFN50N120SIC Datasheet
Total Pages: 7
Size: 467.06 KB
IXYS
This datasheet covers 1 part numbers: IXFN50N120SIC
IXFN50N120SIC Datasheet Page 1
IXFN50N120SIC Datasheet Page 2
IXFN50N120SIC Datasheet Page 3
IXFN50N120SIC Datasheet Page 4
IXFN50N120SIC Datasheet Page 5
IXFN50N120SIC Datasheet Page 6
IXFN50N120SIC Datasheet Page 7

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

50mOhm @ 40A, 20V

Vgs(th) (Max) @ Id

2.2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 20V

Vgs (Max)

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 1000V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC