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IXFP3N120 Datasheet

IXFP3N120 Datasheet
Total Pages: 4
Size: 565.15 KB
IXYS
This datasheet covers 1 part numbers: IXFP3N120
IXFP3N120 Datasheet Page 1
IXFP3N120 Datasheet Page 2
IXFP3N120 Datasheet Page 3
IXFP3N120 Datasheet Page 4
IXFP3N120

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3