Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFR30N50Q Datasheet

IXFR30N50Q Datasheet
Total Pages: 4
Size: 92.66 KB
IXYS
This datasheet covers 1 part numbers: IXFR30N50Q
IXFR30N50Q Datasheet Page 1
IXFR30N50Q Datasheet Page 2
IXFR30N50Q Datasheet Page 3
IXFR30N50Q Datasheet Page 4
IXFR30N50Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3950pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™