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IXFR40N50Q2 Datasheet

IXFR40N50Q2 Datasheet
Total Pages: 5
Size: 562.94 KB
IXYS
This datasheet covers 1 part numbers: IXFR40N50Q2
IXFR40N50Q2 Datasheet Page 1
IXFR40N50Q2 Datasheet Page 2
IXFR40N50Q2 Datasheet Page 3
IXFR40N50Q2 Datasheet Page 4
IXFR40N50Q2 Datasheet Page 5

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 25V

FET Feature

-

Power Dissipation (Max)

320W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™