Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFR64N60Q3 Datasheet

IXFR64N60Q3 Datasheet
Total Pages: 5
Size: 143.57 KB
IXYS
This datasheet covers 1 part numbers: IXFR64N60Q3
IXFR64N60Q3 Datasheet Page 1
IXFR64N60Q3 Datasheet Page 2
IXFR64N60Q3 Datasheet Page 3
IXFR64N60Q3 Datasheet Page 4
IXFR64N60Q3 Datasheet Page 5

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

104mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9930pF @ 25V

FET Feature

-

Power Dissipation (Max)

568W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

TO-247-3