IXKC19N60C5 Datasheet
IXKC19N60C5 Datasheet
Total Pages: 4
Size: 114.77 KB
IXYS
This datasheet covers 1 part numbers:
IXKC19N60C5
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Manufacturer IXYS Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V FET Feature Super Junction Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
