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IXKP10N60C5 Datasheet

IXKP10N60C5 Datasheet
Total Pages: 4
Size: 99.16 KB
IXYS
This datasheet covers 1 part numbers: IXKP10N60C5
IXKP10N60C5 Datasheet Page 1
IXKP10N60C5 Datasheet Page 2
IXKP10N60C5 Datasheet Page 3
IXKP10N60C5 Datasheet Page 4

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

385mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3