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IXTF200N10T Datasheet

IXTF200N10T Datasheet
Total Pages: 5
Size: 160.6 KB
IXYS
This datasheet covers 1 part numbers: IXTF200N10T
IXTF200N10T Datasheet Page 1
IXTF200N10T Datasheet Page 2
IXTF200N10T Datasheet Page 3
IXTF200N10T Datasheet Page 4
IXTF200N10T Datasheet Page 5

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

152nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5