IXTH270N04T4 Datasheet
|
Manufacturer IXYS Series TrenchT4™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 270A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 182nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 9140pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer IXYS Series TrenchT4™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 270A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 182nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 9140pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
