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IXTH50N30 Datasheet

IXTH50N30 Datasheet
Total Pages: 4
Size: 581.37 KB
IXYS
This datasheet covers 1 part numbers: IXTH50N30
IXTH50N30 Datasheet Page 1
IXTH50N30 Datasheet Page 2
IXTH50N30 Datasheet Page 3
IXTH50N30 Datasheet Page 4
IXTH50N30

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3