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IXTH50P085 Datasheet

IXTH50P085 Datasheet
Total Pages: 4
Size: 543.04 KB
IXYS
This datasheet covers 1 part numbers: IXTH50P085
IXTH50P085 Datasheet Page 1
IXTH50P085 Datasheet Page 2
IXTH50P085 Datasheet Page 3
IXTH50P085 Datasheet Page 4
IXTH50P085

IXYS

Manufacturer

IXYS

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

85V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3