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IXTK120N25P Datasheet

IXTK120N25P Datasheet
Total Pages: 5
Size: 163.06 KB
IXYS
This datasheet covers 1 part numbers: IXTK120N25P
IXTK120N25P Datasheet Page 1
IXTK120N25P Datasheet Page 2
IXTK120N25P Datasheet Page 3
IXTK120N25P Datasheet Page 4
IXTK120N25P Datasheet Page 5

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8000pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA