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IXTM12N100 Datasheet

IXTM12N100 Datasheet
Total Pages: 4
Size: 614.36 KB
IXYS
This datasheet covers 2 part numbers: IXTM12N100, IXTH12N100
IXTM12N100 Datasheet Page 1
IXTM12N100 Datasheet Page 2
IXTM12N100 Datasheet Page 3
IXTM12N100 Datasheet Page 4
IXTM12N100

IXYS

Manufacturer

IXYS

Series

GigaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-204AA

Package / Case

TO-204AA, TO-3

IXTH12N100

IXYS

Manufacturer

IXYS

Series

MegaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3