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IXTP42N15T Datasheet

IXTP42N15T Datasheet
Total Pages: 5
Size: 199.2 KB
IXYS
This datasheet covers 1 part numbers: IXTP42N15T
IXTP42N15T Datasheet Page 1
IXTP42N15T Datasheet Page 2
IXTP42N15T Datasheet Page 3
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IXTP42N15T Datasheet Page 5
IXTP42N15T

IXYS

Manufacturer

IXYS

Series

TrenchHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3