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IXTR170P10P Datasheet

IXTR170P10P Datasheet
Total Pages: 5
Size: 134.61 KB
IXYS
This datasheet covers 1 part numbers: IXTR170P10P
IXTR170P10P Datasheet Page 1
IXTR170P10P Datasheet Page 2
IXTR170P10P Datasheet Page 3
IXTR170P10P Datasheet Page 4
IXTR170P10P Datasheet Page 5

Manufacturer

IXYS

Series

PolarP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

108A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 85A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12600pF @ 25V

FET Feature

-

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™