IXTR200N10P Datasheet
IXTR200N10P Datasheet
Total Pages: 5
Size: 151.63 KB
IXYS
This datasheet covers 1 part numbers:
IXTR200N10P
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 235nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |
