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IXTT68P20T Datasheet

IXTT68P20T Datasheet
Total Pages: 6
Size: 180.06 KB
IXYS
This datasheet covers 2 part numbers: IXTT68P20T, IXTH68P20T
IXTT68P20T Datasheet Page 1
IXTT68P20T Datasheet Page 2
IXTT68P20T Datasheet Page 3
IXTT68P20T Datasheet Page 4
IXTT68P20T Datasheet Page 5
IXTT68P20T Datasheet Page 6
IXTT68P20T

IXYS

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

33400pF @ 25V

FET Feature

-

Power Dissipation (Max)

568W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXTH68P20T

IXYS

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

33400pF @ 25V

FET Feature

-

Power Dissipation (Max)

568W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3