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IXTX24N100 Datasheet

IXTX24N100 Datasheet
Total Pages: 4
Size: 98.08 KB
IXYS
This datasheet covers 1 part numbers: IXTX24N100
IXTX24N100 Datasheet Page 1
IXTX24N100 Datasheet Page 2
IXTX24N100 Datasheet Page 3
IXTX24N100 Datasheet Page 4
IXTX24N100

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

267nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8700pF @ 25V

FET Feature

-

Power Dissipation (Max)

568W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3