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IXUN350N10 Datasheet

IXUN350N10 Datasheet
Total Pages: 5
Size: 531.94 KB
IXYS
This datasheet covers 1 part numbers: IXUN350N10
IXUN350N10 Datasheet Page 1
IXUN350N10 Datasheet Page 2
IXUN350N10 Datasheet Page 3
IXUN350N10 Datasheet Page 4
IXUN350N10 Datasheet Page 5
IXUN350N10

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

350A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 175A, 10V

Vgs(th) (Max) @ Id

4V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

640nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

27000pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC