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KSB1116SYTA Datasheet

KSB1116SYTA Datasheet
Total Pages: 5
Size: 52.39 KB
ON Semiconductor
This datasheet covers 2 part numbers: KSB1116SYTA, KSB1116SYBU
KSB1116SYTA Datasheet Page 1
KSB1116SYTA Datasheet Page 2
KSB1116SYTA Datasheet Page 3
KSB1116SYTA Datasheet Page 4
KSB1116SYTA Datasheet Page 5
KSB1116SYTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

135 @ 100mA, 2V

Power - Max

750mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

KSB1116SYBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

135 @ 100mA, 2V

Power - Max

750mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3