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KSB811OTA Datasheet

KSB811OTA Datasheet
Total Pages: 4
Size: 37.59 KB
ON Semiconductor
This datasheet covers 6 part numbers: KSB811OTA, KSB811GTA, KSB811GBU, KSB811YBU, KSB811OBU, KSB811YTA
KSB811OTA Datasheet Page 1
KSB811OTA Datasheet Page 2
KSB811OTA Datasheet Page 3
KSB811OTA Datasheet Page 4
KSB811OTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 100mA, 1V

Power - Max

350mW

Frequency - Transition

110MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

KSB811GTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 100mA, 1V

Power - Max

350mW

Frequency - Transition

110MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

KSB811GBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 100mA, 1V

Power - Max

350mW

Frequency - Transition

110MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

KSB811YBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 100mA, 1V

Power - Max

350mW

Frequency - Transition

110MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

KSB811OBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 100mA, 1V

Power - Max

350mW

Frequency - Transition

110MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

KSB811YTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

500mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 100mA, 1V

Power - Max

350mW

Frequency - Transition

110MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S