KSC1845PTA Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 6V Power - Max 500mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 6V Power - Max 500mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 600 @ 1mA, 6V Power - Max 500mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 1mA, 6V Power - Max 500mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 6V Power - Max 500mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 1mA, 6V Power - Max 500mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 6V Power - Max 500mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
