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KSD882YSTSSTU Datasheet

KSD882YSTSSTU Datasheet
Total Pages: 7
Size: 215 KB
ON Semiconductor
This datasheet covers 6 part numbers: KSD882YSTSSTU, KSD882OS, KSD882YSTSTU, KSD882RS, KSD882YS, KSD882YSTU
KSD882YSTSSTU Datasheet Page 1
KSD882YSTSSTU Datasheet Page 2
KSD882YSTSSTU Datasheet Page 3
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KSD882YSTSSTU Datasheet Page 5
KSD882YSTSSTU Datasheet Page 6
KSD882YSTSSTU Datasheet Page 7
KSD882YSTSSTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 1A, 2V

Power - Max

1W

Frequency - Transition

90MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-225AA, TO-126-3

Supplier Device Package

TO-126-3

KSD882OS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 2V

Power - Max

1W

Frequency - Transition

90MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-225AA, TO-126-3

Supplier Device Package

TO-126-3

KSD882YSTSTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 1A, 2V

Power - Max

1W

Frequency - Transition

90MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-225AA, TO-126-3

Supplier Device Package

TO-126-3

KSD882RS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 1A, 2V

Power - Max

1W

Frequency - Transition

90MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-225AA, TO-126-3

Supplier Device Package

TO-126-3

KSD882YS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 1A, 2V

Power - Max

1W

Frequency - Transition

90MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-225AA, TO-126-3

Supplier Device Package

TO-126-3

KSD882YSTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 1A, 2V

Power - Max

1W

Frequency - Transition

90MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-225AA, TO-126-3

Supplier Device Package

TO-126-3