L6387ED013TR Datasheet
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Manufacturer STMicroelectronics Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 17V (Max) Logic Voltage - VIL, VIH 1.5V, 3.6V Current - Peak Output (Source, Sink) 400mA, 650mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 50ns, 30ns Operating Temperature -45°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer STMicroelectronics Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 17V (Max) Logic Voltage - VIL, VIH 1.5V, 3.6V Current - Peak Output (Source, Sink) 400mA, 650mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 50ns, 30ns Operating Temperature -45°C ~ 125°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-DIP |
Manufacturer STMicroelectronics Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 17V (Max) Logic Voltage - VIL, VIH 1.5V, 3.6V Current - Peak Output (Source, Sink) 400mA, 650mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 50ns, 30ns Operating Temperature -45°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
