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MB85R4M2TFN-G-ASE1 Datasheet

MB85R4M2TFN-G-ASE1 Datasheet
Total Pages: 4
Size: 577.11 KB
Fujitsu Electronics
This datasheet covers 1 part numbers: MB85R4M2TFN-G-ASE1
MB85R4M2TFN-G-ASE1 Datasheet Page 1
MB85R4M2TFN-G-ASE1 Datasheet Page 2
MB85R4M2TFN-G-ASE1 Datasheet Page 3
MB85R4M2TFN-G-ASE1 Datasheet Page 4
MB85R4M2TFN-G-ASE1

Fujitsu Electronics

Manufacturer

Fujitsu Electronics America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FRAM

Technology

FRAM (Ferroelectric RAM)

Memory Size

4Mb (256K x 16)

Memory Interface

Parallel

Clock Frequency

-

Write Cycle Time - Word, Page

150ns

Access Time

150ns

Voltage - Supply

1.8V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

44-TSOP (0.400", 10.16mm Width)

Supplier Device Package

44-TSOP