MBR1080 Datasheet
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Manufacturer ON Semiconductor Series SWITCHMODE™ Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 800mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 80V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series SWITCHMODE™ Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 800mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series SWITCHMODE™ Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 90V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 800mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 90V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series SWITCHMODE™ Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 800mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 80V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series SWITCHMODE™ Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 90V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 800mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 90V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 3.2V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 70ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series SWITCHMODE™ Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 800mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |
