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MBR2H200SFT1G Datasheet

MBR2H200SFT1G Datasheet
Total Pages: 6
Size: 140.63 KB
ON Semiconductor
This datasheet covers 2 part numbers: MBR2H200SFT1G, MBR2H200SFT3G
MBR2H200SFT1G Datasheet Page 1
MBR2H200SFT1G Datasheet Page 2
MBR2H200SFT1G Datasheet Page 3
MBR2H200SFT1G Datasheet Page 4
MBR2H200SFT1G Datasheet Page 5
MBR2H200SFT1G Datasheet Page 6
MBR2H200SFT1G

ON Semiconductor

MBR2H200SFT1G

Manufacturer

ON Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

940mV @ 2A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

200µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SOD-123F

Supplier Device Package

SOD-123FL

Operating Temperature - Junction

-55°C ~ 150°C
MBR2H200SFT3G

ON Semiconductor

MBR2H200SFT3G

Manufacturer

ON Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

2A

Voltage - Forward (Vf) (Max) @ If

940mV @ 2A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

200µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

SOD-123F

Supplier Device Package

SOD-123FL

Operating Temperature - Junction

-55°C ~ 150°C