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MBRB16H60HE3_A/P Datasheet

MBRB16H60HE3_A/P Datasheet
Total Pages: 4
Size: 90.39 KB
Vishay Semiconductor Diodes Division
This datasheet covers 2 part numbers: MBRB16H60HE3_A/P, MBRB16H60HE3_A/I
MBRB16H60HE3_A/P Datasheet Page 1
MBRB16H60HE3_A/P Datasheet Page 2
MBRB16H60HE3_A/P Datasheet Page 3
MBRB16H60HE3_A/P Datasheet Page 4
MBRB16H60HE3_A/P

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

16A

Voltage - Forward (Vf) (Max) @ If

730mV @ 16A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

100µA @ 60V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-65°C ~ 175°C

MBRB16H60HE3_A/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

16A

Voltage - Forward (Vf) (Max) @ If

730mV @ 16A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

100µA @ 60V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-65°C ~ 175°C