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MCH6601-TL-E Datasheet

MCH6601-TL-E Datasheet
Total Pages: 6
Size: 248.29 KB
ON Semiconductor
This datasheet covers 1 part numbers: MCH6601-TL-E
MCH6601-TL-E Datasheet Page 1
MCH6601-TL-E Datasheet Page 2
MCH6601-TL-E Datasheet Page 3
MCH6601-TL-E Datasheet Page 4
MCH6601-TL-E Datasheet Page 5
MCH6601-TL-E Datasheet Page 6
MCH6601-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

200mA

Rds On (Max) @ Id, Vgs

10.4Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.43nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

7.5pF @ 10V

Power - Max

800mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-SMD, Flat Leads

Supplier Device Package

6-MCPH