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MJD5731T4 Datasheet

MJD5731T4 Datasheet
Total Pages: 5
Size: 128.04 KB
ON Semiconductor
This datasheet covers 2 part numbers: MJD5731T4, MJD5731T4G
MJD5731T4 Datasheet Page 1
MJD5731T4 Datasheet Page 2
MJD5731T4 Datasheet Page 3
MJD5731T4 Datasheet Page 4
MJD5731T4 Datasheet Page 5
MJD5731T4

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 200mA, 1A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 300mA, 10V

Power - Max

1.56W

Frequency - Transition

10MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

MJD5731T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 200mA, 1A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 300mA, 10V

Power - Max

1.56W

Frequency - Transition

10MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK