MJE18004D2G Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 450V Vce Saturation (Max) @ Ib, Ic 750mV @ 400mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 2A, 1V Power - Max 75W Frequency - Transition 13MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 450V Vce Saturation (Max) @ Ib, Ic 750mV @ 400mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 2A, 1V Power - Max 75W Frequency - Transition 13MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
