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MJE18006G Datasheet

MJE18006G Datasheet
Total Pages: 7
Size: 202.42 KB
ON Semiconductor
This datasheet covers 2 part numbers: MJE18006G, MJE18006
MJE18006G Datasheet Page 1
MJE18006G Datasheet Page 2
MJE18006G Datasheet Page 3
MJE18006G Datasheet Page 4
MJE18006G Datasheet Page 5
MJE18006G Datasheet Page 6
MJE18006G Datasheet Page 7
MJE18006G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SWITCHMODE™

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

450V

Vce Saturation (Max) @ Ib, Ic

700mV @ 600mA, 3A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

6 @ 3A, 1V

Power - Max

100W

Frequency - Transition

14MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

MJE18006

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SWITCHMODE™

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

450V

Vce Saturation (Max) @ Ib, Ic

700mV @ 600mA, 3A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

6 @ 3A, 1V

Power - Max

100W

Frequency - Transition

14MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB