MMBT6427LT1 Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max) 1μA DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V Power - Max 225mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max) 1μA DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V Power - Max 225mW Frequency - Transition - Operating Temperature - Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max) 1μA DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V Power - Max 225mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
