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MMBT6517LT3G Datasheet

MMBT6517LT3G Datasheet
Total Pages: 5
Size: 119.71 KB
ON Semiconductor
This datasheet covers 4 part numbers: MMBT6517LT3G, NSVMMBT6517LT1G, MMBT6517LT3, MMBT6517LT1G
MMBT6517LT3G Datasheet Page 1
MMBT6517LT3G Datasheet Page 2
MMBT6517LT3G Datasheet Page 3
MMBT6517LT3G Datasheet Page 4
MMBT6517LT3G Datasheet Page 5
MMBT6517LT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

225mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

NSVMMBT6517LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

225mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

MMBT6517LT3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

225mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

MMBT6517LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

1V @ 5mA, 50mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 50mA, 10V

Power - Max

225mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)