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MMIX1F180N25T Datasheet

MMIX1F180N25T Datasheet
Total Pages: 7
Size: 224.59 KB
IXYS
This datasheet covers 1 part numbers: MMIX1F180N25T
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Manufacturer

IXYS

Series

GigaMOS™, HiPerFET™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

132A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

364nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23800pF @ 25V

FET Feature

-

Power Dissipation (Max)

570W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

24-SMPD

Package / Case

24-PowerSMD, 21 Leads